IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFY4N60P3 IXFA4N60P3

IXFP4N60P3

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

g

fs

V

2.2

3.7

S

R

Gi

Gate Input Resistance

6.0



C

iss

365

pF

C

oss

V

46

pF

C

rss

3

pF

t

d(on)

15

ns

t

r

24

ns

t

d(off)

24

ns

t

f

23

ns

Q

g(on)

6.9

nC

Q

gs

V

1.7

nC

Q

gd

2.8

nC

R

thJC

1.10

C/W

R

thCS

TO-220

0.50

C/W

Note 1. Pulse test, t

 300s, duty cycle, d 2%.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

7,005,734B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

7,063,975B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728B1

6,583,505

6,710,463

6,771,478B2 7,071,537

Resistive Switching Times

V

R

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

I

S

V

4

A

I

SM

Repetitive, Pulse Width Limited by T

JM

16

A

V

SD

I

1.4

V

t

rr

250

ns

Q

RM

0.35

C

I

RM

2.15

A

I

V