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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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GD25LQ64CSJS Datasheet(PDF) 66 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25LQ64CSJS Datasheet(HTML) 66 Page - GigaDevice Semiconductor (Beijing) Inc. |
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66 / 77 page  1.8V Uniform Sector Dual and Quad Serial Flash GD25LQ64C 66 (T= -40℃~125℃, VCC=1.65~2.0V, CL=30pf) Symbol Parameter Min. Typ. Max. Unit. fC1 Serial Clock Frequency For: all command except for 03H, 104 MHz fR Serial Clock Frequency For: 03H 80 MHz tCLH Serial Clock High Time 3.5 ns tCLL Serial Clock Low Time 3.5 ns tCLCH Serial Clock Rise Time (Slew Rate) 0.1 V/ns tCHCL Serial Clock Fall Time (Slew Rate) 0.1 V/ns tSLCH CS# Active Setup Time 5 ns tCHSH CS# Active Hold Time 5 ns tSHCH CS# Not Active Setup Time 5 ns tCHSL CS# Not Active Hold Time 5 ns tSHSL CS# High Time (Read/Write) 20 ns tSHQZ Output Disable Time 6 ns tCLQX Output Hold Time 1.2 ns tDVCH Data In Setup Time 2 ns tCHDX Data In Hold Time 2 ns tHLCH Hold# Low Setup Time (Relative To Clock) 5 ns tHHCH Hold# High Setup Time (Relative To Clock) 5 ns tCHHL Hold# High Hold Time (Relative To Clock) 5 ns tCHHH Hold# Low Hold Time (Relative To Clock) 5 ns tHLQZ Hold# Low To High-Z Output 6 ns tHHQX Hold# High To Low-Z Output 6 ns tCLQV Clock Low To Output Valid (CL = 30pF) 7 ns Clock Low To Output Valid (CL = 15pF) 6 ns tWHSL Write Protect Setup Time Before CS# Low 20 ns tSHWL Write Protect Hold Time After CS# High 100 ns tDP CS# High To Deep Power-Down Mode 20 μs tRES1 CS# High To Standby Mode Without Electronic Signature Read 25 μs tRES2 CS# High To Standby Mode With Electronic Signature Read 20 μs tSUS CS# High To Next Command After Suspend 20 μs tRS Latency Between Resume And Next Suspend 100 μs tW Write Status Register Cycle Time 5 50 ms tRST CS# High To Next Command After Reset (Except From Erase) 30 μs tRST_E CS# High To Next Command After Reset (From Erase) 12 ms tPP Page Programming Time 0.7 5 ms tSE Sector Erase Time 90 600 ms tBE1 Block Erase Time (32K Bytes) 0.3 1.5 s tBE2 Block Erase Time (64K Bytes) 0.45 3.0 s tCE Chip Erase Time (GD25LQ64C) 30 90 s Note: 1. Typical value tested at T = 25℃. 2. Value guaranteed by design and/or characterization, not 100% tested in production. |
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