EMB80P03JS datasheet(3/5 Pages) EXCELLIANCE

No. de pieza	EMB80P03JS

Descripción Electrónicos	P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

PDF	5 Pages

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Fabricante Electrónico	EXCELLIANCE [Excelliance MOS Corp.]

Página de inicio	http://www.excelliancemos.com/

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3 / 5 page

2015/7/15

p.3

EMB80P03JS

Normalized on‐Resistance v.s. Junction Temperature

T ‐ Junction Temperature (°C)

1.2

0.6

‐50

0.8

1.0

‐25

I = ‐3A

V = ‐10V

1.4

1.6

1.8

150

100

125

Body Diode Forward Voltage Variation

with Source Current and Temperature

T = 125°C

‐V ‐ Body Diode Forward Voltage( V )

0.6

0.0001

0.001

0.01

0.2

0.4

25°C

V = 0V

0.1

0.8

1.0

‐55°C

1.2

Gate Threshold Voltage v.s. Junction Temperature

T ‐ Junction Temperature (°C)

‐50

1.00

0.50

1.50

2.00

2.50

3.00

150

100

T = 25°C

‐ V ‐ Gate‐Source Voltage( V )

0.10

0.05

0.15

0.20

0.25

0.30

T = 125°C

I = ‐ 2A

On‐Resistance Variation with Gate‐Source Voltage

Drain Current and Gate Voltage

‐I Drain Current( A )

On‐Resistance Variation with

0.8

1.2

1.0

1.4

V = ‐4.5V

2.2

1.8

1.6

2.0

2.4

‐6.0V

‐7.0V

‐10V

‐5.0V

‐8.0V

‐V ‐ Drain‐Source Voltage( V )

‐5.0V

‐4.5V

‐7.0V

‐6.0V

V = ‐10 V

Typical output characteristics

‐8.0V

TYPICAL CHARACTERISTICS

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