EMB80P03JS datasheet(2/5 Pages) EXCELLIANCE

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2015/7/15

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EMB80P03JS

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN TYP

MAX

STATIC

Drain‐Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = ‐250A

‐30

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = ‐250A

‐1 ‐1.5

‐3

Gate‐Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = ‐24V, VGS = 0V

‐1

A

VDS = ‐20V, VGS = 0V, TJ = 125 °C

‐10

On‐State Drain Current

ID(ON)

VDS = ‐5V, VGS = ‐10V ‐3.6

Drain‐Source On‐State Resistance

RDS(ON)

VGS = ‐10V, ID = ‐3.6A

mΩ

VGS = ‐4.5V, ID = ‐2.5A

125

145

Forward Transconductance

gfs

VDS = ‐5V, ID = ‐3A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = ‐15V, f = 1MHz

337

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

1,2

VDS = ‐10V, VGS = ‐10V,

ID = ‐3A

5.1

Gate‐Source Charge

1,2

Qgs

0.9

Gate‐Drain Charge

1,2

Qgd

1.1

Turn‐On Delay Time

1,2

td(on)

Rise Time

1,2

VDS = ‐10V,

Turn‐Off Delay Time

1,2

td(off)

ID = ‐1A, VGS = ‐10V, RGS = 6Ω

Fall Time

1,2

SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current

‐2

Pulsed Current

ISM

‐8

Forward Voltage

VSD

IF = IS, VGS = 0V

1.2

1Pulse test : Pulse Width  300 sec, Duty Cycle  2％.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

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