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K72 Marking, 2N7002K Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

No. de pieza 2N7002K
Descripción Electrónicos  N-Channel Enhancement Mode Power MOSFET
PDF  4 Pages
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Fabricante Electrónico  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Página de inicio  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

2N7002K Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

  2N7002K Datasheet HTML 1Page - Shanghai Leiditech Electronic Technology Co., Ltd 2N7002K Datasheet HTML 2Page - Shanghai Leiditech Electronic Technology Co., Ltd 2N7002K Datasheet HTML 3Page - Shanghai Leiditech Electronic Technology Co., Ltd 2N7002K Datasheet HTML 4Page - Shanghai Leiditech Electronic Technology Co., Ltd  
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SOT-23
FEATURE
z
High density cell design for Low RDS（on）
z
Voltage controlled small signal switch
1. GATE
2. SOURCE
z
Rugged and reliable
3. DRAIN
High saturation current capability
M
Equivalent circuit
MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDS
Drain-Source voltage
60
V
ID
Drain Current
300
mA
PD
Power Dissipation
0.35
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55
~+150
℃
RθJA
Thermal Resistance fromJunction to Ambient
357
℃ /W
z
z
ESD protected
VGS
Gate-Source voltage
±20
V
V(BR)DSS
RDS(on)MAX
ID
60 V
 
3Ω@10V 
300mA
4 Ω@4.5V 
 
APPLICATION
Load Switch for Portable Devices
DC/DC Converter
1
2
3
K72
2N7002K
Enhancement Mode Power MOSFET
N-Channel
Rev :
www.leiditech.com
01.06.2018
1/4


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