| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 Renesas Technology Corp |
RJK03E5DPA
|
141Kb / 7P |
Built in SBD N Channel Power MOS FET High Speed Power Switching
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RJK03E9DPA
|
123Kb / 7P |
30V, 35A, 4.3m max N Channel Power MOS FET High Speed Power Switching
|
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RJK03N0DPA
|
225Kb / 7P |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
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RJK03N1DPA
|
182Kb / 7P |
30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
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RJK03N2DPA
|
234Kb / 7P |
30V, 40A, 4.0m max Built in SBD N Channel Power MOS FET High Speed Power Switching
|
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RJK03N4DPA
|
210Kb / 7P |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
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RJK03N5DPA
|
183Kb / 7P |
30V, 45A, 2.9m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
|
RJK03N6DPA
|
206Kb / 7P |
30V, 40A, 3.8m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
|
RJK03N7DPA
|
209Kb / 7P |
30V, 35A, 4.4m max.Built in SBD N Channel Power MOS FET High Speed Power Switching
|
|
RJK0353DPA
|
108Kb / 7P |
30V, 35A, 5.2m??max. N Channel Power MOS FET High Speed Power Switching
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