| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
 Renesas Technology Corp |
RJK0234DNS
|
288Kb / 7P |
25V, 35A, 5.8m廓max. N Channel Power MOS FET High Speed Power Switching
|
|
RJK03E9DPA
|
123Kb / 7P |
30V, 35A, 4.3m max N Channel Power MOS FET High Speed Power Switching
|
|
RJK03F0DPA
|
123Kb / 7P |
30V, 30A, 6.4m max. N Channel Power MOS FET High Speed Power Switching
|
|
RJK03N3DPA
|
193Kb / 7P |
30V, 35A, 4.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
|
RJK03N7DPA
|
209Kb / 7P |
30V, 35A, 4.4m max.Built in SBD N Channel Power MOS FET High Speed Power Switching
|
|
RJK03M6DPA
|
160Kb / 7P |
30V, 30A, 9.4m max. N Channel Power MOS FET High Speed Power Switching
|
|
RJK03M4DPA
|
157Kb / 7P |
30V, 35A, 4.6m廓max. N Channel Power MOS FET High Speed Power Switching
|
|
RJK0346DPA
|
106Kb / 7P |
30V, 65A, 2.0m??max. N Channel Power MOS FET High Speed Power Switching
|
|
RJK0391DPA
|
108Kb / 7P |
30V, 50A, 2.9m??max. N Channel Power MOS FET High Speed Power Switching
|
|
RJJ0315DPA
|
159Kb / 7P |
-30V, -35A, 5.9m廓max. P Channel Power MOS FET High Speed Power Switching
|