| Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
STMicroelectronics |
SCTH35N65G2V-7
|
378Kb / 15P |
Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package
17-Dec-2020 |
|
SCTWA90N65G2V-4
|
239Kb / 13P |
Silicon carbide Power MOSFET 650 V, 18 mΩ typ., 119 A in an HiP247-4 package
25-Nov-2020 |
|
SCTH35N65G2V-7AG
|
620Kb / 15P |
Automotive-grade silicon carbide Power MOSFET, 650 V, 45 A,55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
24-Jan-2020 |
|
SCTW35N65G2VAG
|
206Kb / 12P |
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package
09-Sep-2020 |
|
SCTW60N120G2AG
|
197Kb / 11P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package
18-May-2020 |
|
SCTWA35N65G2VAG
|
243Kb / 12P |
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 long leads package
11-Aug-2020 |
|
SCTWA60N120G2AG
|
242Kb / 12P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package
16-Dec-2020 |
|
SCT018H65G3AG
|
390Kb / 14P |
Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package
07-Oct-2022 |
|
SCTH60N120G2-7AG
|
356Kb / 14P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 55 A in an H²PAK-7 package
02-Aug-2021 |
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