BAV19WS Fabricante Electrónico, Function, Datasheet

Fabricante Electrónico	No. de pieza	Datasheet Date Size	Descripción Electrónicos	Rohs Pb Free Lifecycle	Página de inicio
NXP Semiconductors	BAV199 T/R		Low-leakage double diode - C_d max.: 2 pF; Configuration: dual series ; I_F max: 160 mA; I_FSM max: 4 A; I_R max: 5@VR=75V nA; IFRM: 500 mA; t_rr max: 3000 ns; V_Fmax: 1@IF=10mA mV; V_R	compliant no active
NXP Semiconductors	BAV199,185		BAV199 - Low-leakage double diode TO-236 3-Pin	active
Nexperia	BAV199,185		BAV199 - Low-leakage double diode@en-us TO-236 3-Pin	active
	BAV199-QR		BAV199-Q - Low-leakage double diode@en-us TO-236 3-Pin	active
	BAV199-QVL		BAV199-Q - Low-leakage double diode@en-us TO-236 3-Pin	active
NXP Semiconductors	BAV199/G,215		BAV199 - Low-leakage double diode TO-236 3-Pin	transferred
Nexperia	BAV199/G,215		BAV199 - Low-leakage double diode@en-us TO-236 3-Pin	obsolete
onsemi	BAV199LT1		70 V Switching Diode, dual, series, SOT-23 (TO-236) 3 LEAD, 3000-REEL	no obsolete
onsemi	BAV199LT1G		70 V Switching Diode, dual, series, SOT-23 (TO-236) 3 LEAD, 3000-REEL	yes active
Nexperia	BAV199S-QZ		BAV199S-Q - Low-leakage quadruple diode@en-us TSSOP 6-Pin	active
NXP Semiconductors	BAV199W T/R		Low-leakage double diode - C_d max.: 2 pF; Configuration: dual series ; I_F max: 135 mA; I_FSM max: 4 A; I_R max: 5@VR=75V nA; IFRM: 500 mA; t_rr max: 3000 ns; V_Fmax: 1@IF=10mA mV; V_R	compliant no active
NXP Semiconductors	BAV199W,215		BAV199W - Low-leakage double diode SC-70 3-Pin	active
Nexperia	BAV199W,215		BAV199W - Low-leakage double diode@en-us SC-70 3-Pin	active
Nexperia	BAV199W-QX		BAV199W-Q - Low-leakage double diode@en-us SC-70 3-Pin	active
onsemi	BAV19TR		High Voltage General Purpose Diode, 10000-REEL	yes active

BAV19WS Fabricante Electrónico

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