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AP9962M Datasheet(PDF) 4 Page - Advanced Power Technology |
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AP9962M Datasheet(HTML) 4 Page - Advanced Power Technology |
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4 / 4 page ![]() Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Circuit Fig 12. Gate Charge Circuit AP9962M 0.01 0.1 1 10 100 0.1 1 10 100 V DS (V) T c =25 o C Single Pulse 1s 1ms 10ms 100ms DC 10 100 1000 10000 1 5 9 13 17 21 25 29 VDS (V) f=1.0MHz Ciss Crss Coss 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 35 Q G , Total Gate Charge (nC) V DS =20V V DS =25V V DS =32V I D =7A 0.8x RATED VDS TO THE OSCILLOSCOPE - + D G S VDS VGS ID I G 1~ 3 mA 0.5x RATED VDS TO THE OSCILLOSCOPE - + 10V D G S VDS VGS RG RD 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) 0.01 0.05 0.1 0.2 DUTY=0.5 Single Pulse PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 135℃/W t T 0.02 |
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