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SSI3439J Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSI3439J Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page  Elektronische Bauelemente SSI3439J -Ch: 0.75A, 20V, RDS(O ) 380 m P-Ch: -0.66A, -20V, RDS(O ) 520 m & P-Ch Enhancement Mode Power MOSFET 06-Apr-2017 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION SSI3439J is N and P Channel enhancement MOS Field Effect Transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for the use in DC-DC conversion, load switch and level shift. FEATURES Surface mount package Low RDS(ON) ESD-protecting gate APPLICATIONS Load/power switching Interfacing switching Battery management for Ultra small portable electronics MARKING PACKAGE INFORMATION Package MPQ Leader Size SOT-563 3K 7 inch MAXIMUM RATINGS (T A=25°C unless otherwise specified) Part Number Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 20 -20 V Typical Gate-Source Voltage VGS ±12 V Continuous Drain Current 1 ID 0.75 -0.66 A Pulsed Drain Current@ tp=10µs IDM 1.8 -1.2 A Thermal Resistance from Junction to Ambient 1 RθJA 833 °C/ W Lead Temperature for Soldering Purposes @1/8’’ from case for 10s TL 260 °C Junction and Storage Temperature Range TJ, TSTG 150, -55~150 °C SOT-563 49K E F J B C D G A H Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 1.50 1.70 F 0.09 0.16 B 1.50 1.70 G 0.45 0.55 C 0.525 0.60 H 0.17 0.27 D 1.10 1.30 J 0.10 0.30 E - 0.05 |
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