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IRFS640 Datasheet(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

No. de pieza IRFS640
Descripción Electrónicos  N-CHANNEL MOSFET in a TO-220F Plastic Package
PDF  6 Pages
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Fabricante Electrónico  FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]
Página de inicio  http://www.fsbrec.com/
Logo FOSHAN - Foshan Blue Rocket Electronics Co.,Ltd.

IRFS640 Datasheet(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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IRFS640
Rev.E Aug.-2017
DATA SHEET
http://www.fsbrec.com
2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Drain-Source Voltage
VDSS
200
V
Drain Current
ID(Tc=25℃)
18
A
Drain Current
ID(Tc=100℃)
11.4
A
Drain Current - Pulsed
IDM
72
A
Gate-Source Voltage
VGSS
±30
V
Single Pulsed Avalanche Energy
EAS
250
mJ
Repetitive Avalanche Energy
EAR
13.9
mJ
Avalanche Current
IAR
18
A
Power Dissipation
PD(Tc=25℃)
43
W
Operating and Storage Temperature Range
TJ,TSTG
-55 to 150
℃
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V
ID=250μA
200
V
Zero Gate Voltage Drain Current
IDSS
VDS=200V
VGS=0V
10
μA
VDS=160V
TC=125℃
100
μA
Gate-Body Leakage Current
Forward
IGSS
VGS=±30V
VDS=0V
±0.1
μA
Gate Threshold Voltage
VGS(th)
VDS=VGS
ID=250μA
2.0
4.0
V
Static Drain-Source
On-Resistance
RDS(on)
VGS=10V
ID=9.0A
0.155
0.18
Ω
Forward Transconductance
gFS
VDS=40V
ID=9.0A
13
S
Drain-Source Diode Forward
Voltage
VSD
VGS=0V
IS=18A
1.5
V
Input Capacitance
Ciss
VDS=25V
VGS=0V
f=1.0MHz
1130
1470
pF
Output Capacitance
Coss
225
290
Reverse Transfer Capacitance
Crss
80
105
Turn-On Delay Time
td(on)
VDD=100V
ID=18A
RG=25Ω
21
55
ns
Turn-On Rise Time
tr
180
370
Turn-Off Delay Time
td(off)
110
230
Turn-Off Fall Time
tf
100
210
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)



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