FMM23P20 datasheet(1/4 Pages) FCI

No. de pieza	FMM23P20

Descripción Electrónicos	2.3A 20V P-Channel Enhancement-Mode MOSFET

PDF	4 Pages

Scroll/Zoom	100%

Fabricante Electrónico	FCI [First Components International]

Página de inicio	http://www.cotra.com.tw/

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FMM23P20 2.3A 20V P-Channel Enhancement-Mode MOSFET

20V P-Channel Enhancement-Mode MOSFET

V

DS= -20V

RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100mΩ

RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150mΩ

Features

Advanced trench process technology

High Density Cell Design For Ultra Low On-Resistance

Fully Characterized Avalanche Voltage and Current

Improved Shoot-Through FOM

Maximum Ratings and Thermal Characteristics (T

A = 25

oC unless otherwise noted)

Symbol

Limit

Unit

VDS

-20

VGS

± 8

ID

-2.3

IDM

-10

TA = 25

oC

0.9

TA = 75

oC

0.57

TJ, Tstg

-55 to 150

oC

EAS

mJ

RθJC

Junction-to-Ambient Thermal Resistance (PCB mounted)

RθJA

145

Note: 1. Maximum DC current limited by the package

2. 1-in

2oz Cu PCB board

Feb '06 Rev 2

1

oC/W

Junction-to-Case Thermal Resistance

Parameter

V

A

W

Drain-Source Voltage

PD

Pulsed Drain Current

Avalanche Energy with Single Pulse

ID=50A, VDD=25V, L=0.5mH

Operating Junction and Storage Temperature Range

Continuous Drain Current

Gate-Source Voltage

Maximum Power Dissipation

N-Channel MOSFET

Top View

Internal Schematic Diagram

TO-236

(SOT-23)

Gate

Drain

Source

1)

2)

2

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FMM23P20 Datasheet(PDF) 1 Page - First Components International

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