Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.

Mar. 2017. Rev. 2.0

1/6

SW045R02VT

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to source voltage

20

V

I

D

Continuous drain current (@T

80*

A

Continuous drain current (@T

50*

A

I

DM

Drain current pulsed

(note 1)

320

A

V

GS

Gate to source voltage

± 12

V

E

AS

Single pulsed avalanche energy

(note 2)

122

mJ

E

AR

Repetitive avalanche energy

(note 1)

9

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

2.6

W

0.02

T

Operating junction temperature & storage temperature

-55 ~ + 150

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thja

Thermal resistance, Junction to ambient

48

*. Drain current is limited by junction temperature.

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW H 045R02VT

SW045R02V

DFN3*3

REEL

N-channel Enhanced mode DFN3*3 MOSFET

Features

 High ruggedness

 Low R

Low R

Low R

 Low Gate Charge (Typ 49nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: DC-DC Converter,Motor Control

Synchronous Rectification

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

I

D

: 80A

R

3.7m

Ω@V

3.3m

Ω@V

G

D

S

DFN3*3

Gate:4 Drain:5,6,7,8 Source:1,2,3

G(4) D(5,6,7,8)

S(1,2,3)

Note: R

efined as the solder mounting surface of the drain pins. R

board design.

DFN3*3 R