SW026R03VT datasheet(1/6 Pages) SEMIPOWER

No. de pieza	SW026R03VT

Descripción Electrónicos	N-channel Enhanced mode DFN5*6 MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Fabricante Electrónico	SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]

Página de inicio	http://www.samwinsemi.com

Logo

1 / 6 page

Nov. 2016. Rev. 2.0

1/6

SW026R03VT

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to source voltage

30

V

I

D

Continuous drain current (@T

C=25

oC)

80*

A

Continuous drain current (@T

C=100

oC)

50*

A

I

DM

Drain current pulsed

(note 1)

320

A

V

GS

Gate to source voltage

± 20

V

E

AS

Single pulsed avalanche energy

(note 2)

398

mJ

E

AR

Repetitive avalanche energy

(note 1)

18

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

C=25

oC)

1.4

W

Derating factor above 25oC

0.01

W/oC

T

STG, TJ

Operating junction temperature & storage temperature

-55 ~ + 150

oC

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thja

Thermal resistance, Junction to ambient

88

oC/W

*. Drain current is limited by junction temperature.

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW HA 026R03VT

SW026R03VT

DFN5*6

REEL

N-channel Enhanced mode DFN5*6 MOSFET

Features

 High ruggedness

 Low R

DS(ON) (Typ 3.5mΩ)@VGS=4.5V

(Typ 3.0m

Ω)@V

GS=10V

 Low Gate Charge (Typ 113nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:DC-DC Converter, Inverter,

Synchronous Rectification

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

DSS : 30V

I

D

: 80A

R

DS(ON) : 3.5mΩ@VGS=4.5V

3.0m

Ω@V

GS=10V

G(4)

D(5,6,7,8)

S(1,2,3)

DFN5*6

Note: R

thja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d

efined as the solder mounting surface of the drain pins. R

thjc is guaranteed by design while Rthca is determined by the user's

board design. 88oC/W on a 1 in2 pad of 2oz copper.

Número de pieza similar - SW026R03VT

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Xian Semipower Electron...	SW029R04ET	615Kb / 6P	N-channel Enhanced mode TO-220/TO-263 MOSFET
Xian Semipower Electron...	SW029R06ET	742Kb / 6P	N-channel Enhanced mode TO-220/TO-263 MOSFET

More results

Descripción similar - SW026R03VT

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Xian Semipower Electron...	SW10N70D	659Kb / 6P	N-channel Enhanced mode TO-262 MOSFET
	SW15P02	1Mb / 7P	P-channel Enhanced mode TO-251/TO-252/DFN33/DFN56 MOSFET
	SW069R06VT	817Kb / 6P	N-channel Enhanced mode TO-251/DFN5*6 MOSFET
	SW069R10VS	714Kb / 7P	N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220 MOSFET
	SW100R08VT	900Kb / 6P	N-channel Enhanced mode DFN5*6 MOSFET
	SW35N10V	894Kb / 6P	N-channel Enhanced mode DFN5*6 MOSFET
	SW40N06V	909Kb / 6P	N-channel Enhanced mode DFN5*6 MOSFET
	SW60N04V	625Kb / 6P	N-channel Enhanced mode DFN5*6 MOSFET
	SW80N06V1	930Kb / 6P	N-channel Enhanced mode TO-251/DFN5*6 MOSFET
	SW80N08V1	887Kb / 6P	N-channel Enhanced mode TO-251/DFN5*6 MOSFET

More results

SW026R03VT Datasheet(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd.

SW026R03VT Datasheet(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd.

Número de pieza similar - SW026R03VT

Descripción similar - SW026R03VT

Html Pages

1 2 3 4 5 6

Datasheet Descarga

Enlace URL