MDS1951 datasheet(2/6 Pages) MGCHIP

2 / 6 page

June

2010. Version 1.0

MagnaChip Semiconductor Ltd.

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDS1951URH

-55~150

SOIC-8

Tape & Reel

Halogen Free

Electrical Characteristics (Ta =25

oC unless otherwise noted)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250μA, VGS = 0V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250μA

1.0

1.9

3.0

Zero Gate Voltage Drain Current

IDSS

VDS = 60V, VGS = 0V

μA

Gate Leakage Current

IGSS

VGS = ±20V, VDS = 0V

0.1

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 4.5A

mΩ

VGS = 4.5V, ID = 3.0A

Forward Transconductance

gFS

VDS = 10V, ID =3.3A

Dynamic Characteristics

Total Gate Charge ( Vgs=10V)

VDS = 30V, ID = 4.5A, VGS = 10V

9.0

10.5

Total Gate Charge ( Vgs=4.5V)

4.4

Gate-Source Charge

Qgs

1.5

Gate-Drain Charge

Qgd

2.0

Input Capacitance

Ciss

VDS = 30V, VGS = 0V, f = 1.0MHz

420

Reverse Transfer Capacitance

Crss

Output Capacitance

Coss

Turn-On Delay Time

td(on)

VGS = 10V ,VDS = 30V,

RL = 6.7Ω, RGEN = 5Ω

4.5

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

9.5

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage

VSD

IS = 1.0A, VGS = 0V

0.7

1.1

Body Diode Reverse Recovery Time

trr

IF = 4.5A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

Qrr

Note :

1. Surface mounted RF4 board with 2oz. Copper.

2. PD is based on TJ(MAX)=150°C

a. PD (TC=25°C) is based on RθJC,

b. PD (TA=25°C) is based on RθJA, t<10sec

3. Starting TJ=25°C, L=1mH, VGS=10V,ID=5A, VDD=30V, Rated VDS=60V

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