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MDF1933TH Datasheet(PDF) 4 Page - MagnaChip Semiconductor.

No. de pieza MDF1933TH
Descripción Electrónicos  Single N-channel Trench MOSFET 80V, 43A, 7.5m(ohm)
PDF  6 Pages
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Fabricante Electrónico  MGCHIP [MagnaChip Semiconductor.]
Página de inicio  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MDF1933TH Datasheet(HTML) 4 Page - MagnaChip Semiconductor.

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Nov. 2014. Rev 1.0
4
MagnaChip Semiconductor Ltd.
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs.
Case Temperature
Fig.11 Transient Thermal Response
Curve
25
50
75
100
125
150
0
10
20
30
40
50
T
C, Case Temperature [،ة]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
،ط Notes :
Duty Factor, D=t
1/t2
PEAK T
J = PDM * Z¥èJC * R¥èJC(t) + TC
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t
1, Rectangular Pulse Duration [sec]
0
5
10
15
20
25
30
35
40
0
1000
2000
3000
4000
5000
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
※ Notes ;
1. V
GS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
V
DS, Drain-Source Voltage [V]
0
10
20
30
40
50
60
0
2
4
6
8
10
V
DS = 40V
※ Note : I
D = 50A
Q
G, Total Gate Charge [nC]
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
1 s
1 ms
100 ms
10 ms
DC
100 us
Operation in This Area
is Limited by R
DS(on)
Single Pulse
T
J=Max rated
T
C=25،ة
V
DS, Drain-Source Voltage [V]



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