STM32F078CB datasheet(74/120 Pages) STMICROELECTRONICS

74 / 120 page

Electrical characteristics

STM32F078CB, STM32F078RB, STM32F078VB

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DocID026006 Rev 4

All I/Os are CMOS- and TTL-compliant (no software configuration required). Their

characteristics cover more than the strict CMOS-technology or TTL parameters. The

coverage of these requirements is shown in Figure 21 for standard I/Os, and in Figure 22 for

5 V-tolerant I/Os. The following curves are design simulation results, not tested in

production.

Ilkg

Input leakage

current(2)

TC, FT and FTf I/O

TTa in digital mode

VSS ≤ VIN ≤ VDDIOx

± 0.1

µA

TTa in digital mode

VDDIOx ≤ VIN ≤ VDDA

TTa in analog mode

VSS ≤ VIN ≤ VDDA

± 0.2

FT and FTf I/O

VDDIOx ≤ VIN ≤ 5 V

RPU

Weak pull-up

equivalent resistor

(3)

VIN = VSS

kΩ

RPD

Weak pull-down

equivalent

resistor(3)

VIN = - VDDIOx

kΩ

CIO

I/O pin capacitance

1. Data based on design simulation only. Not tested in production.

2. The leakage could be higher than the maximum value, if negative current is injected on adjacent pins. Refer to Table 49:

I/O current injection susceptibility

3. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This

PMOS/NMOS contribution to the series resistance is minimal (~10% order).

Table 50. I/O static characteristics (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

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