STM8S003F3 datasheet(63/104 Pages) STMICROELECTRONICS

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STM8S003F3 STM8S003K3

Electrical characteristics

HSE oscillator critical gm formula

gmcrit

fHSE

()2 Rm

2Co C

()

Rm: Notional resistance (see crystal specification)

Lm: Notional inductance (see crystal specification)

Cm: Notional capacitance (see crystal specification)

Co: Shunt capacitance (see crystal specification)

CL1=CL2=C: Grounded external capacitance

gm >> gmcrit

9.3.4

Internal clock sources and timing characteristics

Subject to general operating conditions for VDD and TA.

High speed internal RC oscillator (HSI)

Table 34. HSI oscillator characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

MHz

ACCHSI

Accuracy of HSI oscillator

User-trimmed with the

CLK_HSITRIMR register

for given VDD and TA

conditions(1)

1. See the application note.

1.0(2)

Accuracy of HSI oscillator

(factory calibrated)

VDD = 5 V, TA = 25 °C

VDD = 5 V,

-40 °C

≤ TA ≤ 85 °C

-5

tsu(HSI)

HSI oscillator wakeup

time including calibration

1.0(2)

2. Guaranteed by design.

µs

IDD(HSI)

HSI oscillator power

consumption

170

250(3)

3. Data based on characterization results.

µA

STM8S003F3 Datasheet(PDF) 63 Page - STMicroelectronics

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