TNETV2664FIBZWT datasheet(126/249 Pages) TI1

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TMS320C6424

SPRS347D – MARCH 2007 – REVISED DECEMBER 2009

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5.2

Recommended Operating Conditions

(1)

MIN

NOM

MAX

UNIT

(-7/-6/-5/-4/-Q6/-Q5/-Q4 devices)

1.14

1.2

1.26

CVDD

Supply voltage, Core (CVDD)

(2)

(-7/-6/-5/-4/-L/-Q5 devices)

1.0

1.05

1.1

Supply voltage, I/O, 3.3V (DVDD33)

2.97

3.3

3.63

DVDD

Supply voltage, I/O, 1.8V (DVDDR2, DDR_VDDDLL, PLLPWR18, MXVDD

(3))

1.71

1.8

1.89

VSS

Supply ground (VSS, DDR_VSSDLL, MXVSS

(4))

DDR_VREF

DDR2 reference voltage(5)

0.49DVDDR2

0.5DVDDR2

0.51DVDDR2

DDR_ZP

DDR2 impedance control, connected via 200

Ω resistor to VSS

VSS

DDR_ZN

DDR2 impedance control, connected via 200

Ω resistor to DVDDR2

DVDDR2

High-level input voltage, 3.3V (except PCI-capable and I2C pins)

High-level input voltage, MXI/ CLKIN

0.65MXVDD

VIH

High-level input voltage, PCI

0.5DVDD33

DVDD33 + 0.5

High-level input voltage, I2C

0.7DVDD33

Low-level input voltage, 3.3V (except PCI-capable and I2C pins)

0.8

Low-level input voltage, MXI/ CLKIN

0.35MXVDD

VIL

Low-level input voltage, PCI

–0.5

0.3DVDD33

Low-level input voltage, I2C

0.3DVDD33

Commercial

°C

Operating Junction temperature(6) (7)

Automotive (Q or S suffix)

–40

125

°C

Commercial

°C

Operating Ambient temperature(7)

Automotive (Q or S suffix)

-40

°C

-7 devices

700

MHz

DSP Operating Frequency

-6/-Q6 devices

600

MHz

(SYSCLK1),

-5/-Q5 devices

500

MHz

CVDD = 1.2 V

-4/-Q4 devices

400

MHz

FSYSCLK1

(2)

-7 devices

560

MHz

DSP Operating Frequency

-6 devices

450

MHz

(SYSCLK1),

-5/-Q5/-L devices

400

MHz

CVDD = 1.05 V

-4 devices

350

MHz

(1)

The actual voltage must be determined at device power-up, and not be changed dynamically during run-time.

(2)

Applies to "tape and reel" part number counterparts as well. For more information, see Section 2.7 , Device and Development-Support

Tool Nomenclature.

(3)

Oscillator 1.8 V power supply (MXVDD) can be connected to the same 1.8 V power supply as DVDDR2.

(4)

Oscillator ground (MXVSS) must be kept separate from other grounds and connected directly to the crystal load capacitor ground.

(5)

DDR_VREF is expected to equal 0.5DVDDR2 of the transmitting device and to track variations in the DVDDR2.

(6)

In the absence of a heat sink or direct thermal attachment on the top of the device, use the following formula to determine the device

junction temperature: TJ = TC + (Power x PsiJT). Power and TC can be measured by the user. Section 7.1 , Thermal Data for ZWT and

Section 7.2 , Thermal Data for ZDU provide the junction-to-package top (PSIJT) value based on airflow in the system. In the presence of

a heat sink or direct thermal attachment on the top of the device, additional calculations and considerations must be taken into account.

For more detailed information on thermal considerations, measurements, and calculations, see the Thermal Considerations for the

DM64xx, DM64x, and C6000 Devices Application Report (literature number SPRAAL9).

(7)

Applications must meet both the Operating Junction Temperature and Operating Ambient Temperature requirements. For more detailed

information on thermal considerations, measurements, and calculations, see the Thermal Considerations for the DM64xx, DM64x, and

C6000 Devices Application Report (literature number SPRAAL9).

126

Device Operating Conditions

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