STGWA60H65DFB datasheet(3/19 Pages) STMICROELECTRONICS

No. de pieza	STGWA60H65DFB

Descripción Electrónicos	Low thermal resistance

PDF	19 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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3 / 19 page

DocID024365 Rev 7

3/19

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (VGE = 0)

650

Continuous collector current at TC = 25 °C

80(1)

Current level is limited by bond wires.

Continuous collector current at TC = 100 °C

ICP

(2)

Pulse width limited by maximum junction temperature.

Pulsed collector current

240

VGE

Gate-emitter voltage

±20

Continuous forward current at TC = 25 °C

80(1)

Continuous forward current at TC = 100 °C

PTOT

Total dissipation at TC = 25 °C

375

TSTG

Storage temperature range

- 55 to 150

°C

Operating junction temperature

- 55 to 175

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance junction-case IGBT

0.4

°C/W

RthJC

Thermal resistance junction-case diode

1.14

°C/W

RthJA

Thermal resistance junction-ambient

°C/W

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