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STGWA60H65DFB Datasheet(PDF) 7 Page - STMicroelectronics

No. de pieza STGWA60H65DFB
Descripción Electrónicos  Low thermal resistance
PDF  19 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGWA60H65DFB Datasheet(HTML) 7 Page - STMicroelectronics

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DocID024365 Rev 7
7/19
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
Electrical characteristics
Figure 8. VCE(sat) vs. collector current
Figure 9. Forward bias safe operating area
VCE(sat)
1.4
1.2
020
IC(A)
(V)
40
60
80
2.2
2.0
1.8
1.6
VGE= 15V
TJ= 175°C
TJ= 25°C
TJ= -40°C
2.4
100
GIPD270820131423FSR
Figure 10. Diode VF vs. forward current
Figure 11. Normalized V(BR)CES vs. junction
temperature
V(BR)CES
(norm)
1.1
1.0
0.9
-50
TJ(°C)
0
50
100
150
IC= 2mA
GIPD280820131415FSR
Figure 12. Normalized VGE(th) vs. junction
temperature
Figure 13. Gate charge vs. gate-emitter voltage
VGE(th)
(norm)
0.8
0.7
0.6
-50
TJ(°C)
0
50
100
150
0.9
1.0
IC= 1mA
GIPD280820131503FSR
VGE
(V)
4
2
0
0
Qg(nC)
50 100
150 200
6
8
250 300
350
10
12
14
VCC= 520V, IC= 60A,
IG= 1mA
GIPD280820131507FSR



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