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STGWT30H65FB Datasheet(PDF) 1 Page - STMicroelectronics

No. de pieza STGWT30H65FB
Descripción Electrónicos  Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
PDF  20 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGWT30H65FB Datasheet(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
July 2015
DocID025849 Rev 5
1/20
20
STGFW30H65FB, STGW30H65FB,
STGWT30H65FB
Trench gate field-stop IGBT, HB series
650 V, 30 A high speed
Datasheet
- production data
Figure 1. Internal schematic diagram
Features
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• VCE(sat) = 1.55 V (typ.) @ IC = 30 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
Applications
• Photovoltaic inverters
• High frequency converters
Description
These devices are IGBTs developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the new HB series
of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequency converter. Furthermore, a slightly
positive VCE(sat) temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.
TO-247
1
2
3
TO-3P
1
2
3
TAB
1
1
1
1
2
3
TO-3PF
C (2, TAB)
E (3)
G (1)
Table 1. Device summary
Order code
Marking
Package
Packing
STGFW30H65FB
GFW30H65FB
TO-3PF
Tube
STGW30H65FB
GW30H65FB
TO-247
Tube
STGWT30H65FB
GWT30H65FB
TO-3P
Tube
www.st.com


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