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STGD5H60DF Datasheet(PDF) 6 Page - STMicroelectronics

No. de pieza STGD5H60DF
Descripción Electrónicos  Trench gate field-stop IGBT, H series 600 V, 5 A high speed
PDF  30 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGD5H60DF Datasheet(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF
6/30
DocID027233 Rev 3
Table 8. Collector-emitter diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VF
Forward on-voltage
IF = 5 A
-
2.1
-V
IF = 5 A, TJ = 175 °C
-
1.65
trr
Reverse recovery time
VCC = 400 V; IF = 5 A;
diF/dt = 100 A / µs
-134.5
-
ns
Qrr
Reverse recovery charge
-
48
-
nC
Irrm
Reverse recovery current
-
1.38
-
A
trr
Reverse recovery time
VCC = 400 V; IF = 5 A;
diF/dt = 100 A / µs
TJ = 175 °C
-
157
-
ns
Qrr
Reverse recovery charge
-
165
-
nC
Irrm
Reverse recovery current
-
2.4
-
A



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