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AS6C8008 Datasheet(PDF) 1 Page - Alliance Semiconductor Corporation |
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AS6C8008 Datasheet(HTML) 1 Page - Alliance Semiconductor Corporation |
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1 / 11 page ![]() FEATURES Fast access time : 55ns Low power consumption: Operating current : 30mA (TYP.) Standby current : 6µA (TYP.) LL-version Single 2.7V ~ 5.5V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data retention voltage : 1.5V (MIN.) Lead free and green package available Package : 44-pin 400 mil TSOP-II 48-ball 6mm x 8mm TFBGA GENERAL DESCRIPTION The AS6C8008 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C8008 is well designed for very low power system applications, and particularly well suited for battery back-up nonvolatile memory application. The AS6C8008 operates from a single power supply of 2.7V ~ 5.5V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Power Dissipation Product Family Operating Temperature Vcc Range Speed Standby(ISB1,TYP.) Operating(Icc,TYP.) AS6C8008(I) -40 ~ 85℃ 2.7 ~ 5.5V 55ns 6µA(LL) 30mA FUNCTIONAL BLOCK DIAGRAM DECODER I/O DATA CIRCUIT CONTROL CIRCUIT 1024Kx8 MEMORY A RRAY COLUMN I/O A0-A19 Vcc Vss DQ0-DQ7 CE# WE# OE# CE2 PIN DESCRIPTION SYMBOL DESCRIPTION A0 - A19 Address Inputs DQ0 – DQ7 Data Inputs/Outputs CE#, CE2 Chip Enable Inputs WE# Write Enable Input OE# Output Enable Input VCC Power Supply VSS Ground NC No Connection 512KX 8 BIT LOW POWER CMOS SRAM January 2007 JANUARY 2008 JANUARY/2008, V 1.0 Alliance Memory Inc. Page 1 of 11 AS6C8008 1024K X 8 BIT SUPER LOW POWER CMOS SRAM |
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