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AS6C8008 Datasheet(PDF) 7 Page - Alliance Semiconductor Corporation

No. de pieza AS6C8008
Descripción Electrónicos  512K X 8 BIT LOW POWER 1024K X 8 BIT SUPER LOW POWER CMOS SRAM
PDF  11 Pages
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Fabricante Electrónico  ALSC [Alliance Semiconductor Corporation]
Página de inicio  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS6C8008 Datasheet(HTML) 7 Page - Alliance Semiconductor Corporation

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DATA RETENTION CHARACTERISTICS
PARAMETER
SYMBOL TEST CONDITION
MIN.
TYP. MAX. UNIT
VCC for Data Retention
VDR
CE#
VCC - 0.2V or CE2 0.2V
1.5
-
5.5
V
Data Retention Current
IDR
VCC = 1.5V
CE# VCC - 0.2V or CE2 0.2V
Other pins at 0.2V or VCC - 0.2V
-
4
50
µA
Chip Disable to Data
Retention Time
tCDR
See Data Retention
Waveforms (below)
0
-
-
ns
Recovery Time
tR
tRC*
-
-
ns
tRC* = Read Cycle Time
DATA RETENTION WAVEFORM
Low Vcc Data Retention Waveform (1)
(
CE# controlled)
Vcc
CE#
VDR
1.5V
CE#
Vcc-0.2V
Vcc(min.)
VIH
tR
tCDR
VIH
Vcc(min.)
Low Vcc Data Retention Waveform (2)
(CE2 controlled)
Vcc
CE2
VDR
1.5V
CE2
0.2V
Vcc(min.)
VIL
tR
tCDR
VIL
Vcc(min.)
> _
> _
> _
>
_
>
_
>
_
>
_
>
_
512K X 8 BIT LOW POWER CMOS SRAM
January 2007
JANUARY 2008
JANUARY/2008, V 1.0
Alliance Memory Inc.
Page 7 of 11
AS6C8008
1024K X 8 BIT SUPER LOW POWER CMOS SRAM



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