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IPS511S Datasheet(PDF) 2 Page - International Rectifier

No. de pieza IPS511S
Descripción Electrónicos  FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
PDF  12 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IPS511S Datasheet(HTML) 2 Page - International Rectifier

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IPS511/IPS511S
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(1) Limited by junction temperature (pulsed current limited also by internal wiring)
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rth 1
Thermal resistance junction to case
—
#
—
Rth 2
Thermal resistance junction to ambient
—
$
—
Rth 1
Thermal resistance with standard footprint
—
60
—
Rth 2
Thermal resistance with 1" square footprint
—
40
—
Rth 3
Thermal resistance junction to case
—
#
—
Thermal Characteristics
TO-220
D2PAK (SMD220)
oC/W
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to GROUND lead. (Tj = 25
oC unless otherwise specified).
Symbol Parameter
Min.
Max.
Units
Test Conditions
Vout
Maximum output voltage
Vcc-50 Vcc+0.3
Voffset
Maximum logic ground to load ground offset Vcc-50 Vcc+0.3
Vin
Maximum Input voltage
-0.3
5.5
Vcc max
Maximum Vcc voltage
—
50
Iin, max.
Maximum IN current
-5
10
mA
Vdg
Maximum diagnostic output voltage
-0.3
5.5
V
Idg, max
Maximum diagnostic output current
-1
10
mA
Isd cont.
Diode max. permanent current (1)
—
2.2
Isd pulsed Diode max. pulsed current (1)
—10
ESD1
Electrostatic discharge voltage (Human Body)
—
4
C=100pF, R=1500
Ω,
ESD2
Electrostatic discharge voltage (Machine Model)
—
0.5
C=200pF, R=0
Ω, L=10µH
Pd
Maximum power dissipation
(1)
(TC=25oC) IPS511
—
25
(rth=80oC/W) IPS511S
—
1.56
Tj max.
Max. storage & operating junction temp.
-40
+150
Tlead
Lead temperature (soldering 10 seconds)
—
300
V
A
kV
W
oC



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