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2SD693 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2SD693
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD693 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Darlington Power Transistor
2SD693
DESCRIPTION
·
Collector-Emitter Sustaining Voltage-
VCEO(SUS)= 450V(Min)
·
High Power Dissipation
·
Low Collector Saturation Voltage
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for line operated switchmode applications such as:
·
Switching regulators
·
Inverters
·
Solenoid and relay drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
450
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current
10
A
ICM
Collector Current-peak
15
A
IB
Base Current
1
A
PC
Collector Power Dissipation
@TC=25℃
80
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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