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2SD693 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD693 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Darlington Power Transistor 2SD693 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 450 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 450 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 10 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA 1.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 40mA 2.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A; IB= 10mA 2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 8A; IB= 40mA 2.2 V ICBO Collector Cutoff Current VCB=450V; IE=0 0.1 mA ICEO Collector Cutoff Current VCE= 450V;IB= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 10 mA hFE DC Current Gain IC= 5A; VCE= 5V 150 |
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