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2SD157 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD157 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SD157 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) · Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 50mA · Wide Area of Safe Operation · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in line-operated color TV chroma output circuits and sound output circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 100 mA PC Collector Power Dissipation @ TC=70℃ 4 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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