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2SD157 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD157 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SD157 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 300 V V(BR)CBO Collector-Base Breakdown Voltage IC= 100μA; IE= 0 300 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 100μA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB=5mA 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 50mA; IB=5mA 2.0 V ICBO Collector Cutoff Current VCB= 300V; IE= 0 100 μ A IEBO Emitter Cutoff Current VEB= 7V; IC= 0 10 μ A hFE DC Current Gain IC= 50mA ; VCE= 10V 40 200 hFE-2 DC Current Gain IC= 2A; VCE= 2V 20 fT Current-Gain—Bandwidth Product IC= 50mA; VCE= 10V;ftest= 1.0MHz 20 MHz |
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