2SB991 datasheet(1/2 Pages) ISC

No. de pieza	2SB991

Descripción Electrónicos	Silicon PNP Power Transistor

PDF	2 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

1

isc Silicon PNP Power Transistor

2SB991

DESCRIPTION

·

Collector-Emitter BreakdownVoltage-

: V(BR)CEO= -180V(Min.)

·

Low Collector Saturation Voltage-

: VCE(sat)= -1.0(Max.) @IC= -0.5A

·

Wide area of safe operation

·

Good Linearity of hFE

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Adudio frequency power amplifier

·

High frequency power amplifier

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-180

V

VCEO

Collector-Emitter Voltage

-180

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-1.5

A

ICM

Collector Current-Peak

-3.0

A

PC

Collector Power Dissipation@TC=25℃

20

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

Número de pieza similar - 2SB991

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Savantic, Inc.	2SB992	97Kb / 3P	Silicon PNP Power Transistors
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2SB991 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

2SB991 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

Número de pieza similar - 2SB991

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