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2SB991 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza 2SB991
Descripción Electrónicos  Silicon PNP Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB991 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon PNP Power Transistor
2SB991
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
-180
V
V(BR)CBO
Collector-Base breakdown voltage
IC=-1mA; IE= 0
-180
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
-6
V
VCE(sat)
★
Collector-Emitter Saturation Voltage
IC= -500mA; IB= -50mA
-1.0
V
VBE(sat)
★
Base-Emitter Saturation Voltage
IC= -500mA; IB= -50mA
-1.5
V
ICBO
Collector Cutoff Current
VCB= -180V; IE= 0
-10
μ
A
ICEO
Collector Cutoff Current
VCE= -180V; IB= 0
-100
μ
A
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-10
μ
A
hFE-1
★
DC Current Gain
IC= -5mA ; VCE= -5V
30
hFE-2
★
DC Current Gain
IC= -0.3A ; VCE= -5V
60
320
fT
Current-Gain—Bandwidth Product
IC=-0.5A ; VCE= -10V
8
MHz
★
Pulse Test/PW≦350us,duty≦2%



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