Power MOSFET

−30 V, −3.5 A, Single P−Channel, SOT−23

Features

Applications

Portable Equipment like Cell Phones, PDA’s, Media Players, etc.

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

−30

V

Gate−to−Source Voltage

±12

V

Continuous Drain

Current (Note 1)

Steady

State

−2.2

A

−1.5

t ≤ 5 s

−3.5

Power Dissipation

(Note 1)

Steady

State

0.48

W

t ≤ 5 s

1.25

Pulsed Drain Current

−15.0

A

Operating Junction and Storage Temperature

−55 to

150

°C

Source Current (Body Diode)

−1.0

A

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Unit

Junction−to−Ambient − Steady State (Note 1)

260

°C/W

Junction−to−Ambient − t ≤ 10 s (Note 1)

100

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq

[2 oz] including traces)

G

S

D

Device

Package

ORDERING INFORMATION

−30 V

110 mW @ −4.5 V

75 mW @ −10 V

−2.2 A

SOT−23

CASE 318

STYLE 21

MARKING DIAGRAM/

PIN ASSIGNMENT

2

3

1

3

Drain

1

Gate

2

Source

P−CHANNEL MOSFET

NTR4171PT1G

SOT−23

(Pb−Free)

3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

150 mW @ −2.5 V

TRFMG

G

TRF

= Specific Device Code

M

= Date Code

G

= Pb−Free Package

(Note: Microdot may be in either location)

−1.8 A

−1.0 A

NTR4171PT3G

SOT−23

(Pb−Free)

10000/Tape & Reel

NTR4171P

1 of 2

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