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RN2483 Datasheet(PDF) 6 Page - Microchip Technology |
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RN2483 Datasheet(HTML) 6 Page - Microchip Technology |
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6 / 20 page ![]() RN2483 DS50002346B-page 6 2015 Microchip Technology Inc. 2.0 GENERAL SPECIFICATIONS Table 2-1 provides the general specifications for the module. Table 2-2, Table 2-3, and Table 2-4 provide the electrical characteristics, current consumption, and dimensions of the module. Table 2-5 shows the RF output power calibration data. TABLE 2-1: GENERAL SPECIFICATIONS Specification Description Frequency Band 863.000 MHz to 870.000 MHz; 433.050 MHz to 434.790 MHz Modulation Method FSK, GFSK, and LoRa® Technology modulation Maximum Over-the-Air Data Rate 300 kbps with FSK modulation; 10937 bps with LoRa Technology modulation RF connection Board edge connection Interface UART Operation Range up to 15 km coverage at suburban; up to 5 km coverage at urban area Sensitivity at 0.1% BER -146 dBm(1) RF TX Power Adjustable up to max. 10 dBm on 433 MHz band (limited to meet regulations); max. 14 dBm on the 868 MHz band(2) Temperature (operating) -40°C to +85°C Temperature (storage) -40°C to +115°C Humidity 10% ~ 90% non-condensing Note 1: Depends on modulation. Expand Spreading Factor (SF). 2: TX power is adjustable. For more information, refer to the “RN2483 LoRa® Technology Module Command Reference User’s Guide” (DS40001784). TABLE 2-2: ELECTRICAL CHARACTERISTICS Parameter Min. Typ. Max. Units Supply Voltage 2.1 — 3.6 V Voltage on any pin with respect to VSS (except VDD) -0.3 — VDD + 0.3 V Voltage on VDD with respect to VSS -0.3 — 3.9 V Input Clamp Current (IIK) (VI < 0 or VI > VDD) — — +/-20 mA Output Camp Current (IOK) (VO < 0 or VO > VDD) — — +/-20 mA GPIO sink/source current each — — 25/25 mA Total GPIO sink/source current — — 200/185 mA RAM Data Retention Voltage (in Sleep mode or Reset state) 1.5 — — V VDD Start Voltage to ensure internal Power-on Reset signal — — 0.7 V VDD Rise Rate to ensure internal Power-on Reset signal 0.05 — — V/ms Brown-out Reset Voltage 1.75 1.9 2.05 V Logic Input Low Voltage — — 0.15 x VDD V Logic Input High Voltage 0.8 x VDD — — V Input Leakage at <25°C (VSS<VPIN<VDD, Pin at high-impedance) — 0.1 50 nA Input Leakage at +60°C (VSS<VPIN<VDD, Pin at high-impedance) —0.7 100 nA Input Leakage at +85°C (VSS<VPIN<VDD, Pin at high-impedance) —4 200 nA RF Input Level — — +10 dBm |
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