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DMNH6008SCT Datasheet(PDF) 4 Page - Diodes Incorporated

No. de pieza DMNH6008SCT
Descripción Electrónicos  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Fabricante Electrónico  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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DMNH6008SCT Datasheet(HTML) 4 Page - Diodes Incorporated

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DMNH6008SCT
Document number: DS38138 Rev. 2 - 2
4 of 7
www.diodes.com
June 2016
© Diodes Incorporated
DMNH6008SCT
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
-50
-25
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
V
GS = 10V, ID = 20A
0
2
4
6
8
10
12
14
16
18
20
0
0.3
0.6
0.9
1.2
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
T
J = 125
oC
T
J = 85
oC
T
J = 25
oC
T
J = -55
oC
V
GS = 0V
T
J = 150
oC
T
J = 175
oC
10
100
1000
10000
0
5
10
15
20
25
30
35
40
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f=1MHz
C
rss
C
oss
C
iss
0
2
4
6
8
10
0
10
20
30
40
Qg - (nC)
Figure 11. Gate Charge
V
DS = 30V, ID = 20A
0.01
0.1
1
10
100
1000
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
P
W =10ms
P
W =100µs
R
DS(ON) Limited
P
W =1ms
P
W =100ms
T
J(Max) = 175℃ TC = 25℃
Single Pulse
DUT on infinite heatsink
V
GS= 10V
P
W =1s
P
W =10µs
P
W =1µs
0
0.5
1
1.5
2
2.5
3
3.5
-50
-25
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
I
D = 250μA
I
D = 1mA



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