DMTH10H015LPS

Document number: DS38713 Rev. 2 - 2

2 of 7

www.diodes.com

June 2016

© Diodes Incorporated

DMTH10H015LPS

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

100

V

Gate-Source Voltage

±20

V

Steady

State

7.3

5.8

A

Steady

State

44

28

A

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

120

A

Maximum Continuous Body Diode Forward Current (Note 5)

1.5

A

Avalanche Current (Note 7) L=3mH

7.5

A

Avalanche Energy (Note 7) L=3mH

85

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

1.3

W

Thermal Resistance, Junction to Ambient (Note 5)

98

°C/W

Total Power Dissipation

46

W

Thermal Resistance, Junction to Case

2.7

°C/W

Operating and Storage Temperature Range

-55 to +175

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

100

—

—

V

Zero Gate Voltage Drain Current

—

—

1

µA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

1.4

2

3

V

Static Drain-Source On-Resistance

—

11

16

m

Ω

—

13.5

18

—

18.4

25

Diode Forward Voltage

—

0.9

1.3

V

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

—

1,871

—

pF

f = 1MHz

Output Capacitance

—

261

—

Reverse Transfer Capacitance

—

7

—

Gate Resistance

—

0.75

—

Ω

Total Gate Charge

—

33.3

—

nC



Gate-Source Charge

—

6.9

—

Gate-Drain Charge

—

5.1

—

Turn-On Delay Time

—

6.5

—

ns

Turn-On Rise Time

—

7

—

Turn-Off Delay Time

—

19.7

—

Turn-Off Fall Time

—

8.1

—

Reverse Recovery Time

—

37.9

—

ns

Reverse Recovery Charge

—

51.9

—

nC

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.