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DMP6185SE Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMP6185SE Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 6 page  DMP6185SE Document Number DS36465 Rev. 4 - 2 2 of 6 www.diodes.com January 2014 © Diodes Incorporated DMP6185SE Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source voltage VDSS -60 V Gate-Source voltage VGS ±20 V Continuous Drain current (Note 6) VGS = -10V TA = +25°C ID -3 A TA = +70°C -2.4 Maximum Body Diode Continuous Current IS -2 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM -15 A Single Pulsed Avalanche Current (Note 7) IAS -16 A Single Pulsed Avalanche Energy (Note 7) EAS 13 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) TA = +25°C PD 1.2 W TA = +70°C 0.8 Thermal Resistance, Junction to Ambient (Note 5) Steady state RθJA 104 °C/W t<10s 51 Total Power Dissipation (Note 6) TA = +25°C PD 2.2 W TA = +70°C 1.4 Thermal Resistance, Junction to Ambient (Note 6) Steady state RθJA 60 °C/W t<10s 30 Thermal Resistance, Junction to Case (Note 6) RθJC 7.6 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -60 − − V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS − − -1 µA VDS = -48V, VGS = 0V Gate-Source Leakage IGSS − − ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) -1 − -3 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) − 110 150 mΩ VGS = -10V, ID = -2.2A 130 185 VGS = -4.5V, ID = -1.8A Diode Forward Voltage VSD − -0.75 -0.95 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss − 708 − pF VDS = -30V, VGS = 0V, f = 1MHz Output Capacitance Coss − 39 − pF Reverse Transfer Capacitance Crss − 32 − pF Gate Resistance Rg − 17 28 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) Qg − 6.2 − nC VDS = -30V, ID = -12A Total Gate Charge (VGS = -10V) Qg − 14 − nC Gate-Source Charge Qgs − 2.8 − nC Gate-Drain Charge Qgd − 3.1 − nC Turn-On Delay Time tD(on) − 5.2 − ns VDS = -30V, RL = 2.5Ω VGS = -10V, RG = 3Ω Turn-On Rise Time tr − 23 − ns Turn-Off Delay Time tD(off) − 33 − ns Turn-Off Fall Time tf − 39 − ns Body Diode Reverse Recovery Time trr − 22 − ns IF = -12A, di/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr − 17 − nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. UIS in production with L = 0.1mH, starting TA = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. |
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