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IX2127N Datasheet(PDF) 1 Page - IXYS Corporation |
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IX2127N Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 13 page  INTEGRATED CIRCUITS DIVISION e3 Pb DS-IX2127-R03 www.ixysic.com 1 Driver Characteristics Features • Floating Channel Designed for Bootstrap Operation up to 600V • Tolerant to Negative Transient Voltages; dV/dt Immune • Undervoltage Lockout • 3.3V, 5V, and 12V Input Logic Compatible • Open-Drain FAULT Indicator Pin Shows Over-Current Shutdown • Output in Phase with the Input Applications • High-Speed Gate Driver • Motor Drive Inverter Description The IX2127 is a high-voltage, high-speed power MOSFET and IGBT driver. High-voltage level-shift circuitry enables this device to operate up to 600V. IXYS Integrated Circuits Division’s proprietary common-mode design techniques provide stable operation in high dV/dt noise environments. An on-board comparator can be used to detect an over-current condition in the driven MOSFET or IGBT device, and then shut down drive to that device. An open-drain output, FAULT, indicates that an over-current shutdown has occurred. The gate driver output typically can source 250mA and sink 500mA, which is suitable for fluorescent lamp ballast, motor control, SMPS, and other converter drive topologies. The IX2127 is provided in 8-pin DIP and 8-pin SOIC packages, and is available in Tape & Reel versions. See ordering information below. Ordering Information IX2127 Block Diagram Parameter Rating Units VOFFSET 600 V IO +/- (Source/Sink) 250/500 mA VCSth 250 mV tON / tOFF (Typical) 100 ns Part Description IX2127G 8-Pin DIP (50/Tube) IX2127N 8-Pin SOIC (100/Tube) IX2127NTR 8-Pin SOIC (2000/Reel) V CC IN FAULT COM V B HO V S CS Buffer Comparator Delay Undervoltage Lockout Data Latch Transmitter High-Low Level Shift Low-High Level Shift Receiver Transmitter Data Latch Receiver Low Side High Side QR S Enable Enable Blanking Signal + _ V CC IX2127 High-Voltage Power MOSFET & IGBT Driver |
Número de pieza similar - IX2127N |
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Descripción similar - IX2127N |
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