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DMP3036SFG

Document number: DS37038 Rev. 4 - 2

4 of 6

www.diodes.com

January 2015

© Diodes Incorporated

DMP3036SFG

T , AMBIENT TEMPERATURE (°C)

Figure 7 Gate Threshold Variation vs. Ambient Temperature

A

0.5

0.7

0.9

1.1

1.3

1.5

1.7

1.9

2.1

2.3

2.5

-50

-25

0

25

50

75

100

125

150

-I = 1mA

D

-I = 250µA

D

V

, SOURCE-DRAIN VOLTAGE (V)

Figure 8 Diode Forward Voltage vs. Current

SD

0

5

10

15

20

25

30

0

0.3

0.6

0.9

1.2

1.5

T = 125 C

A



T = 150 C

A



T = 85 C

A



T = 25 C

A



T = -55 C

A



V

, DRAIN-SOURCE VOLTAGE (V)

Figure 9 Typical Drain-Source Leakage Current vs. Voltage

DS

0.1

1

10

100

1000

10000

0

5

10

15

20

25

30

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

V

, DRAIN-SOURCE VOLTAGE (V)

Figure 10 Typical Junction Capacitance

DS

10

100

1000

10000

0

5

10

15

20

25

30

C

oss

C

iss

Q , TOTAL GATE CHARGE (nC)

Figure 11 Gate-Charge Characteristics

g

0

2

4

6

8

10

12

14

16

18

20

V

= -15V

I = -10A

DS

D

V

, DRAIN-SOURCE VOLTAGE (V)

Figure 12 SOA, Safe Operation Area

DS

R

Limited

DS(on)

0.01

0.1

1

10

100

0.1

1

10

100

T

= 150°C

T = 25°C

V

= 10V

Single Pulse

J(max)

A

GS

DUT on 1 * MRP Board

DC

P

= 10s

W

P

= 1s

W

P

= 100ms

W

P

= 10ms

W

P

= 1ms

W

P

= 100µs

W