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CSD18532Q5B Datasheet(PDF) 3 Page - Texas Instruments

No. de pieza CSD18532Q5B
Descripción Electrónicos  60V N-Channel NexFET Power MOSFETs
PDF  14 Pages
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Fabricante Electrónico  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
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CSD18532Q5B Datasheet(HTML) 3 Page - Texas Instruments

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CSD18532Q5B
www.ti.com
SLPS322B – NOVEMBER 2012 – REVISED JULY 2014
5 Specifications
5.1
Electrical Characteristics
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-Source Voltage
VGS = 0 V, ID = 250 μA
60
V
IDSS
Drain-to-Source Leakage Current
VGS = 0 V, VDS = 48 V
1
μA
IGSS
Gate-to-Source Leakage Current
VDS = 0 V, VGS = 20 V
100
nA
VGS(th)
Gate-to-Source Threshold Voltage
VDS = VGS, ID = 250 μA
1.5
1.8
2.2
V
VGS = 4.5 V, ID = 25 A
3.3
4.3
m
Ω
RDS(on)
Drain-to-Source On Resistance
VGS = 10 V, ID = 25 A
2.5
3.2
m
Ω
gfs
Transconductance
VDS = 30 V, ID = 25 A
143
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
3900
5070
pF
Coss
Output Capacitance
VGS = 0 V, VDS = 30 V, ƒ = 1 MHz
470
611
pF
Crss
Reverse Transfer Capacitance
13
17
pF
RG
Series Gate Resistance
1.2
2.4
Ω
Qg
Gate Charge Total (10 V)
44
58
nC
Qgd
Gate Charge Gate-to-Drain
6.9
nC
VDS = 30 V, ID = 25 A
Qgs
Gate Charge Gate-to-Source
10
nC
Qg(th)
Gate Charge at Vth
6.3
nC
Qoss
Output Charge
VDS = 30 V, VGS = 0 V
52
nC
td(on)
Turn On Delay Time
5.8
ns
tr
Rise Time
7.2
ns
VDS = 30 V, VGS = 10 V,
IDS = 25 A, RG = 0 Ω
td(off)
Turn Off Delay Time
22
ns
tf
Fall Time
3.1
ns
DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
ISD = 25 A, VGS = 0 V
0.8
1
V
Qrr
Reverse Recovery Charge
111
nC
VDS= 30 V, IF = 25 A,
di/dt = 300 A/
μs
trr
Reverse Recovery Time
49
ns
5.2 Thermal Information
(TA = 25°C unless otherwise stated)
THERMAL METRIC
MIN
TYP
MAX
UNIT
RθJC
Junction-to-Case Thermal Resistance(1)
0.8
°C/W
RθJA
Junction-to-Ambient Thermal Resistance(1)(2)
50
(1)
RθJC is determined with the device mounted on a 1-inch
2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inches × 1.5-inches (3.81-
cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board
design.
(2)
Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
Copyright © 2012–2014, Texas Instruments Incorporated
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