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IRFAC42R Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza IRFAC42R
Descripción Electrónicos  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRFAC42R Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  IRFAC42R Datasheet HTML 1Page - Inchange Semiconductor Company Limited IRFAC42R Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
2
isc N-Channel Mosfet Transistor
IRFAC42R
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS=0; ID= 0.25mA
600
V
VGS(TH)
Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
2
4
V
RDS(ON)
Drain-Source
On-stage Resistance
VGS= 10V; ID= 3.4A
1.6
Ω
IGSS
Gate Source Leakage Current
VGS= ±20V; VDS= 0
±100
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 600V; VGS= 0
250
uA
VSD
Diode Forward Voltage
IF= 6.2A; VGS= 0
1.5
V
Ciss
Input Capacitance
VDS=250V,VGS=10V,
F=1.0MHz
1300
pF
Coss
Output Capacitance
160
pF
Crss
Reverse Transfer Capacitance
30
pF
·SWITCHING CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
Td(on)
Turn-on Delay Time
VDD=300V,ID=6.2A
RG=9.1Ω
13
20
ns
Tr
Rise Time
18
27
ns
Td(off)
Turn-off Delay Time
55
83
ns
Tf
Fall Time
20
30
ns
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