IRF3205 datasheet(1/2 Pages) ISC

No. de pieza	IRF3205

Descripción Electrónicos	isc N-Channel Mosfet Transistor

PDF	2 Pages

Scroll/Zoom	100%

Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

Logo

1 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc websit

e：

：

： www.iscsemi.com

isc

& iscsemi is registered trademark

1

isc

N-Channel MOSFET Transistor

IRF3205

FEATURES

·

·Drain Current –ID= 110A@ TC=25℃

·Drain Source Voltage-

: VDSS= 55V(Min)

·Static Drain-Source On-Resistance

: RDS(on) = 0.008Ω(Max)

Description

Advanced HEXFET ® Power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well known

for, provides the designer with an extremely efficient and

reliable device for use in a wide variety of applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃

℃

℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

55

V

VGS

Gate-Source Voltage-Continuous

±20

V

ID

Drain Current-Continuous

110

A

IDM

Drain Current-Single Pluse

390

A

PD

Total Dissipation @TC=25℃

200

W

TJ

Max. Operating Junction Temperature

175

℃

Tstg

Storage Temperature

-55~175

℃

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

0.75

℃/W

Rth j-a

Thermal Resistance, Junction to Ambient

62

℃/W

Número de pieza similar - IRF3205

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
International Rectifier	IRF3205	92Kb / 8P	Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??
International Rectifier	IRF3205	160Kb / 10P	Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??
Kersemi Electronic Co.,...	IRF3205	4Mb / 12P	Advanced Process Technology Ultra Low On-Resistance
Nell Semiconductor Co.,...	IRF3205	622Kb / 7P	N-Channel Power MOSFET
Thinki Semiconductor Co...	IRF3205	970Kb / 5P	N-Channel Trench Process Power MOSFET Transistor

More results

Descripción similar - IRF3205

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Inchange Semiconductor ...	ISCB18101	320Kb / 2P	isc N-Channel MOSFET Transistor
	ISCD18130	335Kb / 2P	isc N-Channel MOSFET Transistor
	ISCF18118	330Kb / 2P	isc N-Channel MOSFET Transistor
	ISCN18117	319Kb / 2P	isc N-Channel MOSFET Transistor
	AOB2140L	319Kb / 2P	isc N-Channel MOSFET Transistor
	ISCN1894	325Kb / 2P	isc N-Channel MOSFET Transistor
	IPA60R199CP	333Kb / 2P	isc N-Channel MOSFET Transistor
	IPA90R500C3	330Kb / 2P	isc N-Channel MOSFET Transistor
	STD7N80K5	335Kb / 2P	isc N-Channel MOSFET Transistor
	2SK2543	338Kb / 2P	isc N-Channel MOSFET Transistor

More results

IRF3205 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

IRF3205 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

Número de pieza similar - IRF3205

Descripción similar - IRF3205

Html Pages

1 2

Datasheet Descarga

Enlace URL