IRF362 datasheet(1/2 Pages) ISC

No. de pieza	IRF362

Descripción Electrónicos	isc N-Channel MOSFET Transistor

PDF	2 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

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isc N-Channel MOSFET Transistor

IRF362

DESCRIPTION

·silicon Gate for fast switching at elevate

·rugged

APPLICATIONS

·suited for applications such as

Switching power supplies,motor controls ,inverters,

Choppers,audio amplifiers and high energy pulse circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

ARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

400

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current-continuous@ TC=25℃

22

A

Ptot

Total Dissipation@TC=25℃

300

W

Tj

Max. Operating Junction Temperature

-55~150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.42

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

30

℃/W

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IRF362 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

IRF362 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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