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HFD2N90 Datasheet(PDF) 3 Page - SemiHow Co.,Ltd.

No. de pieza HFD2N90
Descripción Electrónicos  900V N-Channel MOSFET
PDF  9 Pages
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Fabricante Electrónico  SEMIHOW [SemiHow Co.,Ltd.]
Página de inicio  http://www.semihow.com
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HFD2N90 Datasheet(HTML) 3 Page - SemiHow Co.,Ltd.

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background image
10
-1
10
0
10
1
0
300
600
900
1200
1500
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
1. V
GS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
V
DS, Drain-Source Voltage [V]
Typical Characteristics
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
-1
10
0
10
1
150
1. V
GS = 0V
25
V
SD, Source-Drain voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
V
GS, Gate-Source Voltage [V]
04
8
12
16
20
0
2
4
6
8
10
12
V
DS = 450V
V
DS = 180V
V
DS = 720V
* Note : I
D = 2.2A
Q
G, Total Gate Charge [nC]
012
3456
0
2
4
6
8
10
V
GS = 20V
V
GS = 10V
Note : T
J = 25
oC
I
D, Drain Current [A]
10
-1
10
1
V
GS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
* Notes :
1. 300us Pulse Test
2. T
C = 25
oC
V
DS, Drain-Source Voltage [V]



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