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CT3401A-R3 Datasheet(PDF) 1 Page - CT Micro International Corporation |
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CT3401A-R3 Datasheet(HTML) 1 Page - CT Micro International Corporation |
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1 / 11 page  CT Micro Rev 2 Proprietary & Confidential Page 1 Aug, 2015 CT3401A-R3 P-Channel Enhancement MOSFET Package Outline Schematic Features • Drain-Source Breakdown Voltage VDSS - 30 V • Drain-Source On-Resistance RDS(ON) 33m Ω, at VGS= - 10V, IDS= - 4.2A RDS(ON) 38m Ω, at VGS= - 4.5V, IDS= - 4.0A RDS(ON) 51m Ω, at VGS= - 2.5V, IDS= - 1.0A • Continuous Drain Current at TA=25℃ ID = - 4.2A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Applications • Power Management • LCD Display inverter • Load Switch Description The CT3401A-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for low voltage application. Gate Source Drain Gate Drain Source |
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