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BDW36 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza BDW36
Descripción Electrónicos  High Switching Speed
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDW36 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
1
isc Silicon NPN Power Transistors
BDW36
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 180V(Min)
·High Switching Speed
·Low Collector Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 10A
APPLICATIONS
·Designed for use in industrial-military power amplifier and
switching circuit applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.875
℃/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
180
V
VCEO
Collector-Emitter Voltage
180
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
30
A
ICM
Collector Current-Peak
50
A
IB
Base Current-Continuous
10
A
PC
Collector Power Dissipation @TC=25℃
250
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃


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