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BDW36 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDW36 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN Power Transistors BDW36 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 150 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 30A; IB= 6A 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 10A; IB= 1A 1.8 V VBE(on) Base-Emitter On Voltage IC= 10A; VCE= 4V 1.8 V ICEO Collector Cutoff Current VCE= 90V; IB= 0 50 μA ICBO Collector Cutoff Current VCB=180V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 0.1 mA hFE-1 DC Current Gain IC= 8A; VCE= 4V 20 100 hFE-2 DC Current Gain IC= 30A; VCE= 4V 5 fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V 1 MHz |
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