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2N6771 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2N6771
Descripción Electrónicos  High Switching Speed
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6771 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
1
isc Silicon NPN Power Transistors
2N6771/6772/6773
DESCRIPTION
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 300V(Min)- 2N6771
= 350V(Min)- 2N6772
= 400V(Min)- 2N6773
·
High Switching Speed
·
Low Saturation Voltage
APPLICATIONS
·
Designed for use in off-line power supplies and is also well
suited for use in a wide range of inverter or converter circuits
and pulse-width-modulated regulators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.17
℃
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter Voltage
VBE= -1.5V
2N6771
450
V
2N6772
550
2N6773
650
VCEO(SUS)
Collector-Emitter Voltage
2N6771
300
V
2N6772
350
2N6773
400
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
4
A
PC
Collector Power Dissipation@TC=25℃
150
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃


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