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2N6771 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza 2N6771
Descripción Electrónicos  High Switching Speed
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6771 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N6771 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N6771 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
2
isc Silicon NPN Power Transistors
2N6771/6772/6773
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
2N6771
IC= 200mA ; IB= 0
300
V
2N6772
350
2N6773
400
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 5A; IB= 1A
IC= 5A; IB= 1A,TC= 125℃
1.0
2.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 8A; IB= 4A
2.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
1.6
V
ICEV
Collector
Cutoff Current
2N6771
VCE= 450V;VBE= -1.5V
VCE= 450V;VBE= -1.5V,TC= 125℃
0.1
1.0
mA
2N6772
VCE= 550V;VBE= -1.5V
VCE= 550V;VBE= -1.5V,TC= 125℃
0.1
1.0
2N6773
VCE= 650V;VBE= -1.5V
VCE= 650V;VBE= -1.5V,TC= 125℃
0.1
1.0
IEBO
Emitter Cutoff Current
VEB= 8V; IC=0
2.0
mA
hFE
DC Current Gain
IC= 5A ; VCE= 3V
10
40
COB
Output Capacitance
IE= 0;VCB= 10V; ftest=1MHz
50
300
pF
fT
Current-Gain—Bandwidth Product
IC= 0.2A ;VCE= 10V
15
60
MHz
Switching Times
td
Delay Time
IC= 5A; IB1= -IB2= 1A
0.1
μ
s
tr
Rise Time
0.5
μ
s
tstg
Storage Time
2.5
μ
s
tf
Fall Time
0.4
μ
s



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